描述

Silicon carbide (SiC) is a compound semiconductor composed of silicon and carbide. Silicon carbide exhibits the level of hardness that is approximately equivalent to a diamond, which enables SiC semiconductors to operate in harsh conditions. 而且, the characteristics of silicon carbide that provide an edge over the traditional silicon semiconductor in the power semiconductors market are its higher breakdown electric field strength, wider band gap, lower thermal expansion, and resistance to chemical reaction. The global silicon carbide power semiconductor market in terms of revenue is set to grow by US$ 1 亿期间 2021-2027, 以复合年增长率增长 (复合年增长率) 的 18.3% 在预测期内, 据数据和分析公司 StrategyHelix 称. Increase in the demand for consumer electronics and wireless communications, growing demand for energy-efficient battery-powered portable devices, growth in demand of electric vehicles, plug-in electric vehicles, and hybrid electric vehicles are expected to boost the market growth in the coming years.

该报告提供了该时期的最新市场规模数据 2017-2020 并预测到 2027 covering key market aspects like sales value for silicon carbide power semiconductor. The global silicon carbide power semiconductor market is segmented on the basis of type, 应用, 地区. 按类型, it is categorized into discrete product, and power product. The discrete product segment held the largest market share in 2020. 按申请, the silicon carbide power semiconductor market is divided into automotive, 它 & 电信, consumer electronics, aerospace & defense, 工业的, energy & power, 和别的. Based on region, the silicon carbide power semiconductor market is divided into North America, 亚太地区, 欧洲, 和世界其他地区 (排).

The report has profiled some of the key players of the market such as Broadcom Inc., Cree Inc., Fuji Electric Co. 有限公司, Hitachi Power Semiconductor Device Ltd., 英飞凌科技股份公司, 三菱电机公司, 恩智浦半导体公司, ON Semiconductor Corporation, 瑞萨电子公司, SEMIKRON International GmbH, 意法半导体有限公司, 德州仪器公司, 东芝公司, United Silicon Carbide Inc..

该报告对于活跃在该行业的公司和组织来说是宝贵的资源. It provides a cohesive picture of the silicon carbide power semiconductor market to help drive informed decision making for industry executives, 政策制定者, 学术的, 和分析师.

报告范围

类型: discrete product, and power product
应用: 汽车, 它 & 电信, consumer electronics, aerospace & defense, 工业的, energy & power, 和别的
地区: 北美, 亚太地区, 欧洲, 和世界其他地区 (排)
考虑年数: 本报告涵盖期间 2017 到 2027

利益相关者的主要好处

Get a comprehensive picture of the global silicon carbide power semiconductor market
精准定位增长领域和投资趋势
Understand what the future of the global silicon carbide power semiconductor market looks like
确定竞争格局和机会之窗

目录

1. 市场定义
2. 研究方法论
3. 市场数据 & 外表
3.1 市场价值
3.2 市场价值预测
4. Silicon Carbide Power Semiconductor Market by Type
4.1 Discrete Product
4.2 Power Product
5. Silicon Carbide Power Semiconductor Market by Application
5.1 汽车
5.2 它 & 电信
5.3 消费类电子产品
5.4 航天 & 防御
5.5 工业的
5.6 活力 & 力量
5.7 其他的
6. Silicon Carbide Power Semiconductor Market by Region
6.1 北美
6.2 亚太地区
6.3 欧洲
6.4 世界其他地区 (排)
7. 公司简介
7.1 Broadcom Inc.
7.2 Cree Inc.
7.3 富士电机公司, 有限公司.
7.4 Hitachi Power Semiconductor Device, 有限公司.
7.5 英飞凌科技股份公司
7.6 三菱电机公司
7.7 NXP Semiconductors N.V.
7.8 ON Semiconductor Corporation
7.9 瑞萨电子公司
7.10 SEMIKRON International GmbH
7.11 STMicroelectronics N.V.
7.12 德州仪器公司
7.13 东芝公司
7.14 United Silicon Carbide, 公司.
8. 附录
8.1 关于StrategyHelix
8.2 免责声明