Description

Magnetoresistive random access memory (MRAM) is a method of storing data bits using magnetic states instead of the electrical charges used by devices such as dynamic random access memory (DRAM). By combining the high speed of static random access memory (SRAM) and the high density of DRAM, MRAM promises to significantly improve electronic products by storing greater amounts of data, enabling faster data access and consuming less energy than existing electronic memory. According to a report by StrategyHelix, the global mram market is set to increase by US$ 1,350.2 million during 2022-2028, growing at a CAGR of 28.1% during the forecast period.

The report provides up-to-date market size data for period 2018-2021 and forecast to 2028 covering key market aspects like sales value for mram. The global mram market is segmented on the basis of product, application, and region. On the basis of product, the global mram market has been segmented into toggle MRAM, STT-MRAM. The STT-MRAM segment held the largest revenue share in 2021. By application, the global mram market has been segmented into aerospace & defense, automotive, consumer electronics, enterprise storage, robotics, others. Geographically, the global mram market is segmented into North America, Asia Pacific, Europe, Rest of the World (ROW).

The global mram market is highly competitive. The leading players in the mram market include Avalanche Technology Inc., Everspin Technologies Inc., Honeywell International Inc., Numem Inc., NVE Corporation, Samsung Electronics Co. Ltd., Spin Memory Inc., Taiwan Semiconductor Manufacturing Company Limited (TSMC), Toshiba Corporation.

The report is an invaluable resource for companies and organizations active in this industry. It provides a cohesive picture of the mram market to help drive informed decision making for industry executives, policy makers, academic, and analysts.


Report Scope

Product: toggle MRAM, STT-MRAM
Application: aerospace & defense, automotive, consumer electronics, enterprise storage, robotics, others
Region: North America, Asia Pacific, Europe, Rest of the World (ROW)
Years considered: this report covers the period 2018 to 2028


Key Benefits for Stakeholders

– Get a comprehensive picture of the global mram market
– Pinpoint growth sectors and trends for investment


Table of Contents

Part 1. Introduction
– Scope of the study
– Study period
– Geographical scope
– Research methodology
Part 2. Mram market overview
Part 3. Market breakdown by product
– Toggle MRAM
– STT-MRAM
Part 4. Market breakdown by application
– Aerospace & defense
– Automotive
– Consumer electronics
– Enterprise storage
– Robotics
– Others
Part 5. Market breakdown by region
– North America
– Asia Pacific
– Europe
– Rest of the World (ROW)
Part 6. Key companies
– Avalanche Technology, Inc.
– Everspin Technologies, Inc.
– Honeywell International Inc.
– Numem Inc.
– NVE Corporation
– Samsung Electronics Co., Ltd.
– Spin Memory, Inc.
– Taiwan Semiconductor Manufacturing Company Limited (TSMC)
– Toshiba Corporation
About StrategyHelix
Disclaimer


USD 650

Product Type

Industry Statistics

Release Date

June 2022

Region

Global

Pages

21

REQUEST SAMPLE

Global MRAM (Magnetoresistive Random Access Memory) Market 2022

Please fill out our form and we will get back to you.

CUSTOM RESEARCH

Global MRAM (Magnetoresistive Random Access Memory) Market 2022

Please fill out our form and we will get back to you.

login