Descrição

Silicon carbide (SiC) is a compound semiconductor composed of silicon and carbide. Silicon carbide exhibits the level of hardness that is approximately equivalent to a diamond, which enables SiC semiconductors to operate in harsh conditions. Além disso, the characteristics of silicon carbide that provide an edge over the traditional silicon semiconductor in the power semiconductors market are its higher breakdown electric field strength, wider band gap, lower thermal expansion, and resistance to chemical reaction. The global silicon carbide power semiconductor market in terms of revenue is set to grow by US$ 1 bilhão durante 2021-2027, crescendo a uma taxa composta de crescimento anual (CAGR) de 18.3% durante o período de previsão, de acordo com a empresa de dados e análise StrategyHelix. Increase in the demand for consumer electronics and wireless communications, growing demand for energy-efficient battery-powered portable devices, growth in demand of electric vehicles, plug-in electric vehicles, and hybrid electric vehicles are expected to boost the market growth in the coming years.

O relatório fornece dados atualizados sobre o tamanho do mercado para o período 2017-2020 e previsão para 2027 covering key market aspects like sales value for silicon carbide power semiconductor. The global silicon carbide power semiconductor market is segmented on the basis of type, aplicativo, region. Por tipo, it is categorized into discrete product, and power product. The discrete product segment held the largest market share in 2020. By application, the silicon carbide power semiconductor market is divided into automotive, IT & telecommunication, consumer electronics, aerospace & defense, industrial, energy & power, e outros. Based on region, the silicon carbide power semiconductor market is divided into North America, Ásia-Pacífico, Europa, and Rest of the World (ROW).

The report has profiled some of the key players of the market such as Broadcom Inc., Cree Inc., Fuji Electric Co. Ltda., Hitachi Power Semiconductor Device Ltd., Infineon Technologies AG, Mitsubishi Electric Corporation, NXP Semiconductors N.V., ON Semiconductor Corporation, Renesas Electronics Corporation, SEMIKRON International GmbH, STMicroelectronics N.V., Texas Instruments Incorporated, Toshiba Corporation, United Silicon Carbide Inc..

O relatório é um recurso inestimável para empresas e organizações ativas neste setor. It provides a cohesive picture of the silicon carbide power semiconductor market to help drive informed decision making for industry executives, decisores políticos, acadêmico, e analistas.

Escopo do relatório

Tipo: discrete product, and power product
Aplicativo: automotive, IT & telecommunication, consumer electronics, aerospace & defense, industrial, energy & power, e outros
Região: América do Norte, Ásia-Pacífico, Europa, and Rest of the World (ROW)
Anos considerados: este relatório cobre o período 2017 para 2027

Principais benefícios para as partes interessadas

Get a comprehensive picture of the global silicon carbide power semiconductor market
Identifique setores de crescimento e tendências para investimento
Understand what the future of the global silicon carbide power semiconductor market looks like
Identifique o cenário competitivo e a janela de oportunidade

Índice

1. Definição de mercado
2. Metodologia de Pesquisa
3. Dados de mercado & Panorama
3.1 Valor de mercado
3.2 Previsão de valor de mercado
4. Silicon Carbide Power Semiconductor Market by Type
4.1 Discrete Product
4.2 Power Product
5. Silicon Carbide Power Semiconductor Market by Application
5.1 Automotivo
5.2 It & Telecomunicação
5.3 Eletrônicos de consumo
5.4 Aeroespacial & Defense
5.5 Industrial
5.6 Energia & Poder
5.7 Outros
6. Silicon Carbide Power Semiconductor Market by Region
6.1 América do Norte
6.2 Ásia-Pacífico
6.3 Europa
6.4 Rest Of The World (Row)
7. Perfis de empresa
7.1 Broadcom Inc.
7.2 Cree Inc.
7.3 Fuji Electric Co., Ltda.
7.4 Hitachi Power Semiconductor Device, Ltda.
7.5 Infineon Technologies AG
7.6 Mitsubishi Electric Corporation
7.7 NXP Semiconductors N.V.
7.8 ON Semiconductor Corporation
7.9 Renesas Electronics Corporation
7.10 SEMIKRON International GmbH
7.11 STMicroelectronics N.V.
7.12 Texas Instruments Incorporated
7.13 Toshiba Corporation
7.14 United Silicon Carbide, Inc..
8. Apêndice
8.1 Sobre StrategyHelix
8.2 Isenção de responsabilidade