Descrizione

Silicon carbide (SiC) is a compound semiconductor composed of silicon and carbide. Silicon carbide exhibits the level of hardness that is approximately equivalent to a diamond, which enables SiC semiconductors to operate in harsh conditions. Inoltre, the characteristics of silicon carbide that provide an edge over the traditional silicon semiconductor in the power semiconductors market are its higher breakdown electric field strength, wider band gap, lower thermal expansion, and resistance to chemical reaction. The global silicon carbide power semiconductor market in terms of revenue is set to grow by US$ 1 miliardi durante 2021-2027, crescendo ad un tasso di crescita annuale composto (CAGR) Di 18.3% durante il periodo di previsione, secondo la società di dati e analisi StrategyHelix. Increase in the demand for consumer electronics and wireless communications, growing demand for energy-efficient battery-powered portable devices, growth in demand of electric vehicles, plug-in electric vehicles, and hybrid electric vehicles are expected to boost the market growth in the coming years.

Il rapporto fornisce dati aggiornati sulle dimensioni del mercato per il periodo 2017-2020 e previsione a 2027 covering key market aspects like sales value for silicon carbide power semiconductor. The global silicon carbide power semiconductor market is segmented on the basis of type, applicazione, regione. Per tipo, it is categorized into discrete product, and power product. The discrete product segment held the largest market share in 2020. Per applicazione, the silicon carbide power semiconductor market is divided into automotive, IT & telecommunication, consumer electronics, aerospace & defense, industriale, energia & power, e altri. Based on region, the silicon carbide power semiconductor market is divided into North America, Asia Pacifico, Europa, and Rest of the World (RIGA).

The report has profiled some of the key players of the market such as Broadcom Inc., Cree Inc., Fuji Electric Co. Ltd., Hitachi Power Semiconductor Device Ltd., Infineon Technologies AG, Mitsubishi Electric Corporation, NXP Semiconductors N.V., ON Semiconductor Corporation, Renesas Electronics Corporation, SEMIKRON International GmbH, STMicroelectronics N.V., Texas Instruments Incorporated, Toshiba Corporation, United Silicon Carbide Inc..

Il rapporto è una risorsa inestimabile per le aziende e le organizzazioni attive in questo settore. It provides a cohesive picture of the silicon carbide power semiconductor market to help drive informed decision making for industry executives, decisori politici, accademico, e analisti.

Ambito del rapporto

Tipo: discrete product, and power product
Applicazione: automotive, IT & telecommunication, consumer electronics, aerospace & defense, industriale, energia & power, e altri
Regione: Nord America, Asia Pacifico, Europa, and Rest of the World (RIGA)
Anni considerati: la presente relazione copre il periodo 2017 A 2027

Principali vantaggi per gli stakeholder

Get a comprehensive picture of the global silicon carbide power semiconductor market
Individuare i settori in crescita e le tendenze per gli investimenti
Understand what the future of the global silicon carbide power semiconductor market looks like
Identificare il panorama competitivo e la finestra di opportunità

Sommario

1. Definizione del mercato
2. Metodologia di ricerca
3. Dati di mercato & Veduta
3.1 Valore di mercato
3.2 Previsione del valore di mercato
4. Silicon Carbide Power Semiconductor Market by Type
4.1 Discrete Product
4.2 Power Product
5. Silicon Carbide Power Semiconductor Market by Application
5.1 Settore automobilistico
5.2 It & Telecommunication
5.3 Elettronica di consumo
5.4 Aerospaziale & Defense
5.5 Industriale
5.6 Energia & Energia
5.7 Altri
6. Silicon Carbide Power Semiconductor Market by Region
6.1 Nord America
6.2 Asia Pacifico
6.3 Europa
6.4 Rest Of The World (Row)
7. Profili aziendali
7.1 Broadcom Inc.
7.2 Cree Inc.
7.3 Fuji Electric Co., Ltd.
7.4 Hitachi Power Semiconductor Device, Ltd.
7.5 Infineon Technologies AG
7.6 Mitsubishi Electric Corporation
7.7 NXP Semiconductors N.V.
7.8 ON Semiconductor Corporation
7.9 Renesas Electronics Corporation
7.10 SEMIKRON International GmbH
7.11 STMicroelectronics N.V.
7.12 Texas Instruments Incorporated
7.13 Toshiba Corporation
7.14 United Silicon Carbide, Inc.
8. Appendice
8.1 Informazioni su StrategyHelix
8.2 Disclaimer