Global Silicon Carbide Power Semiconductor Market 2021
- Markverslag
- ID: HT21674G
- Afleweringstyd: 1 Werksdag
- Merk: Silicon Carbide Power Semiconductor
Beskrywing
Silicon carbide (SiC) is a compound semiconductor composed of silicon and carbide. Silicon carbide exhibits the level of hardness that is approximately equivalent to a diamond, which enables SiC semiconductors to operate in harsh conditions. Bowendien, the characteristics of silicon carbide that provide an edge over the traditional silicon semiconductor in the power semiconductors market are its higher breakdown electric field strength, wider band gap, lower thermal expansion, and resistance to chemical reaction. The global silicon carbide power semiconductor market in terms of revenue is set to grow by US$ 1 miljard tydens 2021-2027, groei teen 'n saamgestelde jaarlikse groeikoers (CAGR) van 18.3% gedurende die voorspellingsperiode, volgens die data- en ontledingsmaatskappy StrategyHelix. Increase in the demand for consumer electronics and wireless communications, growing demand for energy-efficient battery-powered portable devices, growth in demand of electric vehicles, plug-in electric vehicles, and hybrid electric vehicles are expected to boost the market growth in the coming years.
Die verslag verskaf up-to-date markgrootte data vir tydperk 2017-2020 en voorspel tot 2027 covering key market aspects like sales value for silicon carbide power semiconductor. The global silicon carbide power semiconductor market is segmented on the basis of type, aansoek, streek. Volgens tipe, it is categorized into discrete product, and power product. The discrete product segment held the largest market share in 2020. Deur aansoek, the silicon carbide power semiconductor market is divided into automotive, IT & telecommunication, consumer electronics, aerospace & defense, industrial, energy & power, en ander. Based on region, the silicon carbide power semiconductor market is divided into North America, Asiatiese Stille-Oseaan, Europa, and Rest of the World (RY).
The report has profiled some of the key players of the market such as Broadcom Inc., Cree Inc., Fuji Electric Co. Bpk., Hitachi Power Semiconductor Device Ltd., Infineon Technologies AG, Mitsubishi Electric Corporation, NXP Semiconductors N.V., ON Semiconductor Corporation, Renesas Electronics Corporation, SEMIKRON International GmbH, STMicroelectronics N.V., Texas Instruments Incorporated, Toshiba Corporation, United Silicon Carbide Inc..
Die verslag is 'n waardevolle hulpbron vir maatskappye en organisasies wat in hierdie bedryf aktief is. It provides a cohesive picture of the silicon carbide power semiconductor market to help drive informed decision making for industry executives, beleidmakers, akademies, en ontleders.
Verslag Omvang
Tik: discrete product, and power product
Toepassing: automotive, IT & telecommunication, consumer electronics, aerospace & defense, industrial, energy & power, en ander
Streek: Noord-Amerika, Asiatiese Stille-Oseaan, Europa, and Rest of the World (RY)
Jare oorweeg: hierdie verslag dek die tydperk 2017 aan 2027
Sleutelvoordele vir belanghebbendes
Get a comprehensive picture of the global silicon carbide power semiconductor market
Bepaal groeisektore en -neigings vir belegging
Understand what the future of the global silicon carbide power semiconductor market looks like
Identifiseer die mededingende landskap en geleentheidsvenster
INHOUDSOPGAWE
1. Markdefinisie
2. Navorsingsmetodologie
3. Markdata & Outlook
3.1 Markwaarde
3.2 Markwaarde Voorspelling
4. Silicon Carbide Power Semiconductor Market by Type
4.1 Discrete Product
4.2 Power Product
5. Silicon Carbide Power Semiconductor Market by Application
5.1 Automotive
5.2 It & Telecommunication
5.3 Consumer Electronics
5.4 Aerospace & Defense
5.5 Industrial
5.6 Energie & Power
5.7 Ander
6. Silicon Carbide Power Semiconductor Market by Region
6.1 Noord-Amerika
6.2 Asiatiese Stille-Oseaan
6.3 Europa
6.4 Rest Of The World (Row)
7. Maatskappy profiele
7.1 Broadcom Inc.
7.2 Cree Inc.
7.3 Fuji Electric Co., Bpk.
7.4 Hitachi Power Semiconductor Device, Bpk.
7.5 Infineon Technologies AG
7.6 Mitsubishi Electric Corporation
7.7 NXP Semiconductors N.V.
7.8 ON Semiconductor Corporation
7.9 Renesas Electronics Corporation
7.10 SEMIKRON International GmbH
7.11 STMicroelectronics N.V.
7.12 Texas Instruments Incorporated
7.13 Toshiba Corporation
7.14 United Silicon Carbide, Inc.
8. Bylaag
8.1 Oor StrategyHelix
8.2 Vrywaring
USD 2,750